Growth of high-aspect ratio horizontally-aligned ZnO nanowire arrays

Pranav Soman, Max Darnell, Marc D. Feldman, Shaochen Chen

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

A method of fabricating horizontally-aligned zinc-oxide (ZnO) nanowire (NW) arrays with full control over the width and length is demonstrated. SEM images reveal the hexagonal structure typical of zinc oxide NWs. Arrays of high-aspect ratio horizontal ZnO NWs are fabricated by making use of the lateral overgrowth from dot patterns created by electron beam lithography (EBL). An array of patterned wires are lifted off and transferred to a flexible PDMS substrate with possible applications in several key nanotechnology areas.

Original languageEnglish (US)
Pages (from-to)6880-6885
Number of pages6
JournalJournal of Nanoscience and Nanotechnology
Volume11
Issue number8
DOIs
Publication statusPublished - Aug 1 2011

    Fingerprint

Keywords

  • E-beam lithography
  • High-Aspect ratio
  • Horizontally-aligned
  • Nanowire
  • PDMS
  • Patterning
  • Zinc oxide

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

Cite this